Abstract: The progress of ultra large scale integrated circuit (ULSI) needs novel low dielectric content dielectric materials and the introducing of nano/mesopores into the materials is a effective method to decrease the content. A short review regarding the preparation principles, typical products and the past decade development of low-k dielectric materials based on polymers was given including reprecipitation, sol-gel, thermolysis, supercritical foaming and electrochemical etch methods. It has been demonstrated that the advanced porogenic methods and porogenic mechanisms aiming at the ULSI field ought to be studied, the heat resistance and the water absorbent of the dielectric materials ought to be depressed and improved respectively.